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| CD4016BMS November 1994 CMOS Quad Bilateral Switch Applications * Analog Signal Switching/Multiplexing * Signal Gating * Squelch Control * Chopper * Modulator * Demodulator * Commutating Switch * Digital Signal Switching/Multiplexing * CMOS Logic Implementation * Analog to Digital & Digital to Analog Conversion * Digital Control of Frequency, Impedance, Phase, and Analog Signal Gain Features * Transmission or Multiplexing of Analog or Digital Signals * High Voltage Type (20V Rating) * 20V Digital or 10V Peak-to-Peak Switching * 280 Typical On-State Resistance for 15V Operation * Switch On-State Resistance Matched to Within 10 Typ. Over 15V Signal Input Range * High On/Off Output Voltage Ratio: 65dB Typ. at FIS = 10kHz, RL = 10k * High Degree of Linearity: <0.5% Distortion Typ. at FIS = 1kHz, VIS = 5Vp-p, VDD-VSS 10V, RL = 10k * Extremely Low Off State Switch Leakage Resulting in Very Low Offset Current and High Effective Off State Resistance: 100pA Typ. at VDD-VSS = 18V, TA = 25oC * Extremely High Control Input Impedance (Control circuit Isolated from Signal Circuit: 1012 Typ. * Low Crosstalk Between Switches: -50dB Typ. at FIS = 0.9MHz, RL = 1k * Matched Control Input to Signal Output Capacitance: Reduces Output Signal Transients * Frequency Response, Switch On = 40MHz (Typ.) * 100% Tested for Quiescent Current at 20V * Maximum Control Input Current of 1A at 18V Over Full Package Temperature Range; 100nA at 18V at +25oC * 5V, 10V and 15V Parametric Ratings Description CD4016BMS Series types are quad bilateral switches intended for the transmission or multiplexing of analog or digital signals. Each of the four independent bilateral switches has a single control signal input which simultaneously biases both the p and n device in a given switch on or off. The CD4016BMS is supplied in these 14 lead outline packages: Braze Seal DIP Frit Seal DIP Ceramic Flatpack H4Q H1B H3W Pinout CD4016BMS TOP VIEW Functional Diagram IN/OUT SIG A SIG A IN 1 SIG A OUT 2 SIG B IN 3 SIG B OUT 4 CONTROL B 5 CONTROL C 6 VSS 7 14 VDD 13 CONTROL A OUT/IN 12 CONTROL D 11 SIG D IN 10 SIG D OUT CONTROL B 9 SIG C OUT 8 SIG C IN CONTROL C SIG B IN/OUT OUT/IN 1 SW A 2 14 VDD 13 CONTROL A 3 SW D 12 CONTROL D 4 SW B 11 IN/OUT SIG D 5 10 OUT/IN 6 SW C 9 OUT/IN SIG C VSS 7 8 IN/OUT CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 File Number 3296 7-733 Specifications CD4016BMS Absolute Maximum Ratings DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V (Voltage Referenced to VSS Terminals) Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Package Types D, F, K, H Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265oC At Distance 1/16 1/32 Inch (1.59mm 0.79mm) from case for 10s Maximum Reliability Information Thermal Resistance . . . . . . . . . . . . . . . . ja jc Ceramic DIP and FRIT Package . . . . . 80oC/W 20oC/W Flatpack Package . . . . . . . . . . . . . . . . 70oC/W 20oC/W o Maximum Package Power Dissipation (PD) at +125 C For TA = -55oC to +100oC (Package Type D, F, K) . . . . . . 500mW For TA = +100oC to +125oC (Package Type D, F, K) . . . . . Derate Linearity at 12mW/oC to 200mW Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW For TA = Full Package Temperature Range (All Package Types) Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2 VDD = 18V, VIN = VDD or GND Input Leakage Current IIL VC = VDD or GND VDD = 20 3 1 2 VDD = 18V Input Leakage Current IIH VC = VDD or GND VDD = 20 3 1 2 VDD = 18V Input/Output Leakage Current (Switch Off) IOZL VDD = 18V, VC = 0V, VIS = 18V, VOS = 0V 3 1 2 3 Input/Output Leakage Current (Switch Off) IOZH VDD = 18V, VIS = 18V, VOS = 0V 1 2 3 N Threshold Voltage P Threshold Voltage On-State Resistance RL = 10K Returned to VDD-VSS/2 VNTH VPTH RON10 VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VIS = VDD or VSS, VDD = 10V 1 1 1 2 3 RON10 VIS = 4.75V or 5.75V, VDD = 10V 1 2 3 RON15 VIS = VDD or VSS, VDD = 15V 1 2 3 RON15 VIS = 7.25 or 7.75, VDD = 15V 1 2 3 Functional (Note 3) F VDD = 2.8V, VIN = VDD or GND VDD = 20V, VIN = VDD or GND VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Switch Threshold RL = 100K to VDD SWTHRH5 VDD = 5V, VC = 1.5V, VIS = GND SWTHRH15 VDD = 15V, VC = 2V, VIS = GND 7 7 8A 8B 1, 2, 3 1, 2, 3 +25oC, LIMITS TEMPERATURE +25 oC PARAMETER Supply Current SYMBOL IDD CONDITIONS (NOTE 1) VDD = 20V, VIN = VDD or GND MIN -100 -1000 -100 -100 -1000 -100 -2.8 0.7 - MAX 0.5 50 0.5 100 1000 100 100 1000 100 -0.7 2.8 660 960 600 2000 2600 1870 400 600 360 850 1230 775 UNITS A A A nA nA nA nA nA nA nA nA nA nA nA nA V V V +125oC -55oC +25oC +125o C -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC +25oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC +25oC +25oC +125oC -55oC +25oC, +125oC, -55oC +125oC, -55oC VOH > VOL < VDD/2 VDD/2 4.1 14.1 - V V 7-734 Specifications CD4016BMS TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) GROUP A SUBGROUPS 1 2 3 Control Input High Voltage (Note 2, Figure 12) VIS = VSS, and VIS = VDD VIHC VDD = 5V, |IIS| = .16mA, 4.6V < VOS < 0.4V VDD = 5V, |IIS| = .14mA, 4.6V < VOS < 0.4V VDD = 5V, |IIS| = .25mA, 4.6V < VOS < 0.4V VIHC VDD = 15V, |IIS| = 1.2mA, 13.5V < VOS < 1.5V VDD = 15V, |IIS| = 1.1mA, 13.5V < VOS < 1.5V VDD = 15V, |IIS| = 1.8mA, 13.5V < VOS < 1.5V 1 2 3 1 2 3 LIMITS TEMPERATURE +25oC +125oC -55oC +25oC +125oC -55oC +25oC +125oC -55oC MIN 3.5 3.5 3.5 11 11 11 MAX 0.7 0.4 0.9 UNITS V V V V V V V V V PARAMETER Input Voltage Control, Low (Note 2) SYMBOL VILC CONDITIONS (NOTE 1) VDD = 5V, VOS = VDD, VIS = VSS, and VDD = 5V, VOS = VSS, VIS = VDD, |IIS| < 10A NOTES: 1. All voltages referenced to device GND, 100% testing being implemented. 2. Go/No Go test with limits applied to inputs 3. VDD = 2.8V/3V, RL = 100K to VDD VDD = 20V/18V, RL = 10K to VDD TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS TEMPERATURE 9 10, 11 9 10, 11 +25oC +125oC, -55oC LIMITS MIN MAX 100 135 70 95 UNITS ns ns ns ns PARAMETER Propagation Delay Signal Input to Signal Output Propagation Delay Turn On NOTES: SYMBOL TPHL TPLH TPZH TPZL CONDITIONS VDD = 5V, VIN = VDD or GND (Notes 1, 2) VDD = 5V, VIN = VDD or GND (Notes 2, 3) +25oC +125oC, -55oC 1. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 2. -55oC and +125oC limits guaranteed, 100% testing being implemented. 3. CL = 50pF, RL = 1K, TR, TF < 20ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current SYMBOL IDD CONDITIONS VDD = 5V, VIN = VDD or GND NOTES 1, 2 TEMPERATURE -55oC, +25oC +125oC VDD = 10V, VIN = VDD or GND 1, 2 -55oC, +25oC MIN MAX 0.25 7.5 0.5 15 0.5 30 0.7 0.4 0.9 UNITS A A A A A A V V V +125oC VDD = 15V, VIN = VDD or GND 1, 2 -55oC, +25oC +125oC Input Voltage Control, Low VILC VDD = 10V, VOS = VDD, VIS = VSSand VOS = VSS, VIS = VDD |IIS| < 10A 1, 2 +25oC-55oC +125oC -55oC 7-735 Specifications CD4016BMS TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) LIMITS PARAMETER Input Voltage Control, High (See Figure 12) SYMBOL VIHC CONDITIONS VDD = 10V, VIS = VDD or GND NOTES 1, 2 1, 2 1, 2 Propagation Delay Signal Input to Signal Output Propagation Delay Turn On Input Capacitance NOTES: 1. All voltages referenced to device GND. 2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized on initial design release and upon design changes which would affect these characteristics. 3. CL = 50pF, RL = 200K. Input TR, TF < 20ns. 4. CL = 50pF, RL = 1K TPHL TPLH TPZH TPZL CIN VDD = 10V VDD = 15V VDD = 10V VDD = 15V Any Input 1, 2, 3 1, 2, 3 1, 2, 4 1, 2, 4 1, 2 TEMPERATURE +25oC-55oC +125oC -55oC +25oC +25oC +25oC +25oC +25oC MIN 7 7 7 MAX 40 30 40 30 7.5 UNITS V V V ns ns ns ns pF TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Supply Current N Threshold Voltage N Threshold Voltage Delta P Threshold Voltage P Threshold Voltage Delta Functional SYMBOL IDD VNTH VNTH VPTH VPTH F CONDITIONS VDD = 20V, VIN = VDD or GND VDD = 10V, ISS = -10A VDD = 10V, ISS = -10A VSS = 0V, IDD = 10A VSS = 0V, IDD = 10A VDD = 18V, VIN = VDD or GND VDD = 3V, VIN = VDD or GND Propagation Delay Time TPHL TPLH VDD = 5V 1, 2, 3, 4 +25oC NOTES 1, 4 1, 4 1, 4 1, 4 1, 4 1 TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN -2.8 0.2 VOH > VDD/2 MAX 2.5 -0.2 1 2.8 1 VOL < VDD/2 1.35 x +25oC Limit UNITS A V V V V V ns NOTES: 1. All voltages referenced to device GND. 2. CL = 50pF, RL = 200K, Input TR, TF < 20ns. 3. See Table 2 for +25oC limit. 4. Read and Record TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25OC PARAMETER Supply Current - SSI ON Resistance SYMBOL IDD RONDEL10 0.1A 20% x Pre-Test Reading DELTA LIMIT TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Pre Burn-In) Interim Test 1 (Post Burn-In) Interim Test 2 (Post Burn-In) PDA (Note 1) METHOD 100% 5004 100% 5004 100% 5004 100% 5004 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas READ AND RECORD IDD, IOL5, IOH5A IDD, IOL5, IOH5A IDD, IOL5, IOH5A 7-736 Specifications CD4016BMS TABLE 6. APPLICABLE SUBGROUPS (Continued) CONFORMANCE GROUP Interim Test 3 (Post Burn-In) PDA (Note 1) Final Test Group A Group B Subgroup B-5 Subgroup B-6 Group D METHOD 100% 5004 100% 5004 100% 5004 Sample 5005 Sample 5005 Sample 5005 Sample 5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 2, 3, 8A, 8B, 9 Subgroups 1, 2 3 Subgroups 1, 2, 3, 9, 10, 11 READ AND RECORD IDD, IOL5, IOH5A NOTE: 1. 5% Parameteric, 3% Functional; Cumulative for Static 1 and 2. TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS Group E Subgroup 2 METHOD 5005 PRE-IRRAD 1, 7, 9 POST-IRRAD Table 4 READ AND RECORD PRE-IRRAD 1, 9 POST-IRRAD Table 4 TABLE 8. BURN-IN AND IRRADIATION TEST CONNECTIONS OSCILLATOR FUNCTION Static Burn-In 1 Note 1 Static Burn-In 2 Note 1 Dynamic BurnIn Note 1 Irradiation Note 2 NOTE: 1. Each pin except VDD and GND will have a series resistor of 10K 5%, VDD = 18V 0.5V 2. Each pin except VDD and GND will have a series resistor of 47K 5%; Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures, VDD = 10V 0.5V OPEN 2, 3, 9, 10 2, 3, 9, 10 2, 3, 9, 10 GROUND 1, 4-8, 11-13 7 7 7 VDD 14 1, 4-6, 8, 11-14 14 1, 4-6, 8, 11-14 2, 3, 9, 10 5, 6, 12, 13 1, 4, 8, 11 9V -0.5V 50kHz 25kHz Schematic Diagram VDD CONTROL VC n IN/OUT VSS p OUT/IN FIGURE 1. 1 OF 4 IDENTICAL SECTIONS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com 737 CD4016BMS Typical Performance Characteristics SUPPLY VOLTS: VDD = +15V; VSS = 0 AMBIENT TEMPERATURE (TA) = +25oC 12.5 OUTPUT SIGNAL VOLTS (VOS) OUTPUT SIGNAL VOLTS (VOS) RL = 100k 1k SUPPLY VOLTS: VDD = +10V; VSS = 0 AMBIENT TEMPERATURE (TA) = +25oC 10 RL = 100k 10k 6 1k VIS 4 n VC = VDD 2 RL 0 2 4 6 8 10 INPUT SIGNAL VOLTS (VIS) VOS p 10k 10.0 8 7.5 VIS n 5.0 VC = VDD RL 2.5 0 2.5 5.0 7.5 10.0 12.5 15.0 INPUT SIGNAL VOLTS (VIS) p VOS FIGURE 2. TYPICAL ON-STATE CHARACTERISTICS FOR 1 OF 4 SWITCHES WITH VDD = +15V, VSS = 0V SUPPLY VOLTS: VDD = +5;V VSS = 0 AMBIENT TEMPERATURE (TA) = +25oC OUTPUT SIGNAL VOLTS (VOS) FIGURE 3. TYPICAL ON-STATE CHARACTERISTICS FOR 1 OF 4 SWITCHES WITH VDD = +10V, VSS = 0V SUPPLY VOLTS: VDD = +7.5 V; VSS = -7.5V AMBIENT TEMPERATURE (TA) = +25oC OUTPUT SIGNAL VOLTS (VOS) 5 RL = 100k 1k 2.5 10k 5 4 3 1k 2 1 RL 0 1 2 3 4 5 VOS n VC = VDD p VIS RL = 100k 10k 0 VIS n -5 VC = VDD RL -7.5 -5 -2.5 0 2.5 5 INPUT SIGNAL VOLTS (VIS) 7.5 p VOS -2.5 INPUT SIGNAL VOLTS (VIS) FIGURE 4. TYPICAL ON-STATE CHARACTERISTICS FOR 1 OF 4 SWITCHES WITH VDD = +5V, VSS = 0V SUPPLY VOLTS: VDD = +5V; VSS = -5V AMBIENT TEMPERATURE (TA) = +25oC 10k RL = 100k 1k 2 FIGURE 5. TYPICAL ON-STATE CHARACTERISTICS FOR 1 OF 4 SWITCHES WITH VDD = +7.5V, VSS = -7.5V 6 OUTPUT SIGNAL VOLTS (VOS) SUPPLY VOLTS: VDD = +2.5V; VSS = -2.5V AMBIENT TEMPERATURE (TA) = +25oC OUTPUT SIGNAL VOLTS (VOS) 3 2 1 0 VIS -1 -2 n VC = VDD RL -3 -2 -1 0 1 2 3 p VOS RL = 100k 10k 1k 4 0 VIS -2 n VC = VDD -4 -4 -2 0 2 RL 4 6 p VOS INPUT SIGNAL VOLTS (VIS) INPUT SIGNAL VOLTS (VIS) FIGURE 6. TYPICAL ON-STATE CHARACTERISTICS FOR 1 OF 4 SWITCHES WITH VDD = +5V, VSS = -5V FIGURE 7. TYPICAL ON-STATE CHARACTERISTICS FOR 1 OF 4 SWITCHES WITH VDD = +2.5V, VSS = -2.5V 7-738 CD4016BMS Typical Performance Characteristics (Continued) SUPPLY VOLTS: VDD = +5V, VSS = -5V CONTROL VOLTS (VC) = -5V INPUT SIGNAL VOLTS (VIS) = 5VP-P SINE WAVE (1.77 RMS) *LOAD CAPACITANCE (CL) = CFIXTURE+CMETER=2.3+2.5=4.8pF FIXTURE AND METER NULLED OUT CIOS (FIXTURE) = 0.8pF 6 OUTPUT SIGNAL VOLTS (VOS) 4 -55oC +125oC OUTPUT SIGNAL RMS MILLIVOLTS (VOS) SUPPLY VOLTS: VDD = +5V; VSS = -5V 30 25 20 15 10 5 0 p VIS n RF VOLTMETER BOONTON RADIO MODEL 91-CA OR EQUIV. VOS 100k RL VC = VSS CL 2 10k 39 41.5 45 51 0 VC = +5V -2 +125oC n VIS LOAD RESISTANCE (RL) = 1M 1k p VOS RL = 10k -4 -55oC -4 -2 0 2 4 6 INPUT SIGNAL VOLTS (VIS) 10-1 2 4 68 1 10 102 103 INPUT SIGNAL FREQUENCY (fis) kHz 2 4 68 2 4 68 2 4 68 2 4 68 4 10 FIGURE 8. TYPICAL ON-STATE CHARACTERISTICS AS A FUNCTION OF TEMPERATURE FOR 1 OF 4 SWITCHES WITH VDD = +5V, VSS = -5V SUPPLY VOLTS: VDD = +5V; VSS = -5V INPUT SIGNAL VOLTS (VIS) = 5Vp-p SINE WAVE (1.77RMS) FIXTURE AND METER NULLED OUT OUTPUT SIGNAL RMS MILLIVOLTS (VOS) FIGURE 9. TYPICAL FEEDTHRU vs FREQUENCY - SWITCH OFF 30 25 20 15 10 5 0 10-1 1 10 102 1k n p VC = VSS VOS (B) 1k 5V VC = VDD RF VOLTMETER BOONTON RADIO MODEL 91-CA VIS (A) n OR EQUIV. 1k p 1k 35.5 37 39 41.5 45 51 OUTPUT SIGNAL RMS VOLTS (VOS) ATTENUATION (db) SUPPLY VOLTS: VDD = +5V, VSS = -5V INPUT SIGNAL VOLTS (VIS) = 5Vp-p SINE WAVE (1.77 RMS) CONTROL VOLTS (VC) = +5V *LOAD CAPACITANCE = (CFIX + CMETER) = 2.3 + 2.5 = 4.8pF 2.0 1.5 1.0 0.5 0.1 2 4 68 CIOS = 0.8pF RF VOLTMETER BOONTON RADIO MODEL 91-CA OR EQUIV. VOS (RMS) RL VC = VDD CL* p VIS n LOAD RESISTANCE (RL) = 1M 10k 1k 100k -3dB POINTS 1 2 4 68 10 2 4 68 100 2 103 4 68 104 INPUT SIGNAL FREQUENCY (FIS) MHz INPUT SIGNAL FREQUENCY (fis) (kHz) FIGURE 10. TYPICAL CROSSTALK BETWEEN SWITCH CIRCUITS IN THE SAME PACKAGE FIGURE 11. TYPICAL FREQUENCY RESPONSE - SWITCH ON Iis Vis CD4016BMS 1 OF 4 SWITCHES VOS ron = [ Vis - Vos ] [ Iis ] FIGURE 12. DETERMINATION OF RON AS A TEST CONDITION FOR CONTROL INPUT HIGH VOLTAGE (VIHC) SPECIFICATION 7-739 ATTENUATION (db) 37 CD4016BMS TYPICAL ON-STATE RESISTANCE CHARACTERISTICS, TA = +25oC SUPPLY CONDITIONS CHARACTERISTICS* RON VDD (V) +15 VSS (V) 0 LOAD CONDITIONS RL = 1k VALUE () 200 200 RON (max.) RON +15 +10 0 0 300 290 290 RON (max.) RON +10 +5 0 0 500 860 600 RON (max.) RON +5 +7.5 0 -7.5 1.7k 200 200 RON (max.) RON +7.5 +5 -7.5 -5 290 260 310 RON (max.) RON +5 +2.5 -5 -2.5 600 590 720 RON (max.) +2.5 -2.5 232k Vis (V) +15 0 +11 +10 0 +7.4 +5 0 +4.2 +7.5 -7.5 0.25 +5 -5 0.25 +2.5 -2.5 0.25 RL = 10k VALUE () 200 200 300 250 250 560 470 580 7k 200 200 280 250 250 580 450 520 300k Vis (V) +15 0 +9.3 +10 0 +5.6 +5 0 +2.9 +7.5 -7.5 0.25 +5 -5 0.25 +2.5 -2.5 0.25 RL = 100k VALUE () 180 200 320 240 300 610 450 800 33k 180 180 400 240 240 760 490 520 870k Vis (V) +15 0 +9.2 +10 0 +5.5 +5 0 +2.7 +7.5 -7.5 0.25 +5 -5 0.25 +2.5 -2.5 0.25 *Variation from perfect switch, ron = 0 Typical Wave Response FIGURE 13. TYPICAL SINE WAVE RESPONSE OF VDD = +7.5V, VSS = -7.5V Scale X = 0.2ms/Div Y = 2.0V/Div VDD = VC = +7.5V, RL = 10K CL = 15pF fis = 1kHz VIS = 5Vp-p Distortion = 0.2% FIGURE 14. TYPICAL SINE WAVE RESPONSE OF VDD = +5V, VSS = -5V Scale X = 0.2ms/Div Y = 2.0V/Div VDD = VC = +5V, RL = 10K CL = 15pF fis = 1kHz VIS = 5Vp-p Distortion = 0.4% 7-740 CD4016BMS Typical Wave Response (Continued) FIGURE 15. TYPICAL SINE WAVE RESPONSE OF VDD = +2.5V, VSS = -2.5V Scale: X = 0.2ms/Div Y = 2.0V/Div FIGURE 16. TYPICAL SQUARE WAVE RESPONSE AT VDD = VC = +15V, VSS = GND Scale: X = 100ns/Div Y = 5.0V/Div FIGURE 17. TYPICAL SQUARE WAVE RESPONSE AT VDD = VC = +10V, VSS = GND Scale: X = 100ns/Div Y = 5.0V/Div FIGURE 18. TYPICAL SQUARE WAVE RESPONSE AT VDD = VC = +5V, VSS = GND Scale: X = 100ns/Div Y = 2.0V/Div +10V 0 tr = tf = 20ns VC VC VDD = +10V VOS WITH TEST UNIT (1 SWITCH OF CD4016BMS PLUGGED IN TEST FIXTURE) Vis CD4016BMS Vos ALL UNUSED TERMINALS ARE CONNECTED TO VSS VOS FIXTURE ALONE (NO UNIT. . .TERM 5 TO 3 OF SOCKET) (a) (b) VC = 10V/Div VOS = 0.2V/Div t = 100ns/Div FIGURE 19. CROSSTALK-CONTROL INPUT TO SIGNAL OUTPUT 7-741 CD4016BMS REP RATE VDD +10V 0 tr = tf = 20ns VDD 0 tr = tf = 20ns VC VC tr = tf = 20ns VDD Vis CD4016BMS 200K Vos CL CD4016BMS Vis = VDD ALL UNUSED TERMINALS ARE CONNECTED TO VSS VSS CL Vos RL = 10K ALL UNUSED TERMINALS ARE CONNECTED TO VSS VSS FIGURE 20. PROPAGATION DELAY TIME SIGNAL INPUT (VIS) TO SIGNAL OUTPUT (VOS) FIGURE 21. MAXIMUM CONTROL-INPUT REPETITION RATE VC (13) (1) CD4016BMS Vis = VDD VSS I I = 10A Vos VC = -5V VSS = -5V VDD = +5V MEASURED ON BOONTON CAPACITANCE BRIDGE MODEL 75A (1MHz) Vis CIOS Cis Cos Vos SWITCH THRESHOLD VOLTAGE IS DEFINED AS THE VOLTAGE APPLIED TO A TRANSMISSION GATE CONTROL WHICH CAUSES 10A OF TRANSMISSION GATE CURRENT ALL UNUSED TERMINALS ARE CONNECTED TO VSS FIGURE 22. SWITCH THRESHOLD VOLTAGE VDD 0 tr = tf = 20ns VC VDD FIGURE 23. CAPACITANCE CIOS AND COS VC CD4016BMS Vos CL RL VSS Vos VSS VDD Vos 50% tPZH 10% tPZL 10% RL TO VSS Vis TO VDD RL TO VDD Vis TO VSS Vis = VDD OR VSS ALL UNUSED TERMINALS ARE CONNECTED TO VSS FIGURE 24. TURN-ON PROPAGATION DELAY CONTROL INPUT Chip Dimensions and Pad Layout METALLIZATION: PASSIVATION: Thickness: 11kA - 14kA, AL. 10.4kA - 15.6kA, Silane BOND PADS: 0.004 inches X 0.004 inches MIN DIE THICKNESS: 0.0198 inches - 0.0218 i Dimensions in parentheses are in millimeters and are derived from the basic inch dimensions -3 7-742 |
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